发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE HAVING MAGNETIC SHIELD UNIT
摘要 A method of manufacturing a semiconductor package having a magnetic shield function is provided. The method includes forming cracks in a lattice structure on an active surface in which electrode terminals are formed; grinding a back surface of a wafer facing the active surface, bonding a tape on the active surface of the wafer, expanding the tape such that the wafer on the tape is divided as semiconductor chips, forming a shield layer on surfaces of the semiconductor chips and the tape, cutting the shield layer between the semiconductor chips and individualizing as each of the semiconductor chips which has a first shield pattern formed on back surface and sides, bonding the semiconductor chips on a substrate, and forming a second shield pattern on each of the active surfaces of the semiconductor chips, wherein the semiconductor chips and the substrate are physically and electrically connected by a bonding wire.
申请公布号 US2015243607(A1) 申请公布日期 2015.08.27
申请号 US201414490105 申请日期 2014.09.18
申请人 JANG Jae-Gwon;PARK Jin-Woo;LEE Jong-Ho 发明人 JANG Jae-Gwon;PARK Jin-Woo;LEE Jong-Ho
分类号 H01L23/00;H01L23/31;H01L21/78 主分类号 H01L23/00
代理机构 代理人
主权项 1. A method of manufacturing a semiconductor package, comprising: forming cracks in a lattice structure on an active surface of a wafer in which electrode terminals are formed; grinding a back surface of the wafer facing the active surface; bonding a tape on the active surface of the wafer; expanding the tape such that the wafer on the tape is divided into a plurality of sections, each section corresponding to a semiconductor chip; forming a shield layer on surfaces of the semiconductor chips and the tape; cutting the shield layer between the semiconductor chips, and sectioning off each of the semiconductor chips, each semiconductor chip having an active surface and a first shield pattern on a back surface and sides thereof; bonding the semiconductor chips to a substrate; and forming a second shield pattern on each active surface of the semiconductor chips, wherein the semiconductor chips and the substrate are connected by a bonding wire.
地址 Hwaseong-si KR