CLEANING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND PROGRAM

摘要

The present invention removes a deposit attached to an inside of a processing room or an inside of a nozzle after forming a film. A cleaning method according to the present invention comprises: a first cleaning process of removing a deposit including a film deposited on a surface of a member in a processing room by a thermochemical reaction by supplying fluoric gas into the processing room heated to a first temperature from a first nozzle heated to the first temperature and supplying nitric oxide gas into the processing room from a second nozzle heated to the first temperature; a process of changing the temperature in the processing room to a second temperature higher than the first temperature; and a second cleaning process of removing a material remaining on the surface of the member in the processing room after removing the deposit by a thermochemical reaction and removing a deposit attached to an inside of the first nozzle by supplying the fluoric gas into the processing room heated to the second temperature from the first nozzle heated to the second temperature.