Methods of forming contacts to source/drain regions of FinFET devices

摘要

In one example, the method disclosed herein includes forming at least one fin for a FinFET device in a semiconducting substrate, performing at least one process operation to form a region in the at least one fin that contains a metal diffusion inhibiting material, depositing a layer of metal on the region in the at least one fin and forming a metal silicide region on the at least one fin.

主权项

1. A method, comprising:
forming at least one fin for a FinFET device in a semiconducting substrate; performing an amorphization implant process on said at least one fin to form an amorphous region in said at least one fin; performing at least one process operation to form a diffusion inhibiting region in said amorphous region that contains a metal diffusion inhibiting material; depositing a layer of metal on said amorphous region including said diffusion inhibiting region; and forming a metal silicide region on said at least one fin using said layer of metal.