Thin film transistor, pixel structure and method for fabricating the same

摘要

A thin film transistor (TFT) that includes a gate, an oxide semiconductor layer, a gate insulator, a source, and a drain is provided. The gate insulator is located between the oxide semiconductor layer and the gate. The source and the drain are in contact with different portions of the oxide semiconductor layer. Each of the source and the drain has a ladder-shaped sidewall that is partially covered by the oxide semiconductor layer. A method for fabricating the above-mentioned TFT is also provided.

主权项

1. A method for fabricating a thin film transistor, comprising:
sequentially forming a gate and a gate insulator on a substrate, the gate insulator covering the gate; forming a source electrode and a drain electrode on the gate insulator, the source electrode and the drain electrode respectively having a ladder-shaped sidewall, wherein an entire lower surface of the source electrode and an entire lower surface of the drain electrode are substantially planar, and each of the source electrode and the drain electrode is a single one layer; and forming an oxide semiconductor layer on the gate insulator to cover at least one portion of the ladder-shaped sidewall of the source electrode and at least one portion of the ladder-shaped sidewall of the drain electrode, wherein the source electrode and the drain electrode are respectively in contact with different portions of the oxide semiconductor layer.