发明名称 Method of correcting flare and method of preparing extreme ultra violet mask
摘要 A method of correcting flare includes measuring flare of a test pattern, calculating point spread functions (PSFs) of the flare as a function of distance, and correcting the flare using corresponding PSFs for an influence range of the flare. The influence range is divided into a first range less than a predetermined distance and a second range equal to or greater than the predetermined distance, and corresponding PSFs are separately applied to the first and second ranges to correct the flare.
申请公布号 US9116438(B2) 申请公布日期 2015.08.25
申请号 US201213410518 申请日期 2012.03.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Lee Young-Mi;Kim In-Sung;Park Ji-Soong;Ahn Byoung-Sup;Shin Jae-Pil
分类号 G03B27/68;G03B27/52;G03B27/32;G03F1/36;G03F7/20;G03F1/22;G03F1/84;G03B27/42;G03B27/54 主分类号 G03B27/68
代理机构 F. Chau & Associates, LLC 代理人 F. Chau & Associates, LLC
主权项 1. A method of correcting flare in extreme ultraviolet (EUV) lithography, the method comprising: measuring flare of a test pattern; calculating point spread functions (PSFs) of the flare as a function of distance; and correcting the flare using the corresponding PSF for an influence range of the flare, wherein the influence range is divided into a first range less than a predetermined distance and a second range equal to or greater than the predetermined distance, and the predetermined distance corresponds to a distance between full-fields on which an exposure is performed, or a width of a scribe lane of a wafer.
地址 Suwon-Si, Gyeonggi-Do KR