发明名称 |
Method of correcting flare and method of preparing extreme ultra violet mask |
摘要 |
A method of correcting flare includes measuring flare of a test pattern, calculating point spread functions (PSFs) of the flare as a function of distance, and correcting the flare using corresponding PSFs for an influence range of the flare. The influence range is divided into a first range less than a predetermined distance and a second range equal to or greater than the predetermined distance, and corresponding PSFs are separately applied to the first and second ranges to correct the flare. |
申请公布号 |
US9116438(B2) |
申请公布日期 |
2015.08.25 |
申请号 |
US201213410518 |
申请日期 |
2012.03.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Lee Young-Mi;Kim In-Sung;Park Ji-Soong;Ahn Byoung-Sup;Shin Jae-Pil |
分类号 |
G03B27/68;G03B27/52;G03B27/32;G03F1/36;G03F7/20;G03F1/22;G03F1/84;G03B27/42;G03B27/54 |
主分类号 |
G03B27/68 |
代理机构 |
F. Chau & Associates, LLC |
代理人 |
F. Chau & Associates, LLC |
主权项 |
1. A method of correcting flare in extreme ultraviolet (EUV) lithography, the method comprising:
measuring flare of a test pattern; calculating point spread functions (PSFs) of the flare as a function of distance; and correcting the flare using the corresponding PSF for an influence range of the flare, wherein the influence range is divided into a first range less than a predetermined distance and a second range equal to or greater than the predetermined distance, and the predetermined distance corresponds to a distance between full-fields on which an exposure is performed, or a width of a scribe lane of a wafer. |
地址 |
Suwon-Si, Gyeonggi-Do KR |