发明名称 |
ELECTRONICS INCLUDING GRAPHENE-BASED HYBRID STRUCTURES |
摘要 |
Device are described that include a semiconductor material layer and at least one graphene-based electrode disposed over a portion of the semiconductor material layer, such that the at least one graphene-based electrode forms an overlap region with the semiconductor material layer. The device includes a means for providing charge carriers in the at least one graphene-based electrode proximate to the overlap region, to reduce a difference between a work function of the at least one graphene-based electrode and an electron affinity of the semiconductor material layer, to reduce a Schottky barrier height between the semiconductor material layer and the at least one graphene-based electrode. |
申请公布号 |
WO2015102746(A3) |
申请公布日期 |
2015.08.20 |
申请号 |
WO2014US63903 |
申请日期 |
2014.11.04 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
YU, LILI;WANG, HAN;PALACIOS, TOMAS |
分类号 |
H01L29/43;C01B31/04;H01B1/04 |
主分类号 |
H01L29/43 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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