USE OF CsOH IN DIELECTRIC CMP SLURRY

摘要

PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing composition including an abrasive and cesium hydroxide, and a method for polishing a dielectric layer associated with an integrated circuit using cesium hydroxide containing a polishing composition.SOLUTION: A composition for chemical mechanical polishing composition comprises fumed abrasive grains and about 0.01 to about 5.0 wt.% of at least one Cs+ basic salt. Preferably, the composition for chemical mechanical polishing comprises water, about 1 to about 50 wt.% of fumed silica, and about 0.1 to 2.0 wt.% of CsOH.