| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a resistance element in which noise is reduced.SOLUTION: A semiconductor device comprises a P-type diffusion resistance element 100a formed in an N-type diffusion layer 102 on a P-type semiconductor substrate. The P-type diffusion resistance element 100a has: a resistor made of a semiconductor resistance layer 103; and a stressor film 106 that is a first insulating film formed on the resistor. The first insulating film is an insulating film for applying distortion stress on the resistor and comprises a slit 107 that is opened on the resistor and reduces the carrier mobility in a direction other than a current direction.</p> |
