METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS

摘要

A method of manufacturing a semiconductor apparatus, comprising forming a structure including an insulating layer on a substrate, and an electrode on the structure, forming an insulating first film covering the electrode and the structure, forming an opening in a projection, of the first film, formed by a step between upper faces of the electrode and the structure, to expose part of the upper face of the electrode as a first portion, forming a second film covering the first film and the first portion, forming a protective film in the opening by processing the second film, the protective film covering a side face defining the opening and the first portion and being not formed on an upper face of the projection, and forming a third film on the first film and the protective film by spin coating.

主权项

1. A method of manufacturing a semiconductor apparatus comprising:
a first step of forming a structure including an insulating layer on a substrate, and forming an electrode on the structure; a second step of forming a first film covering the electrode and the structure, the first film being insulative; a third step of forming an opening in a projection of the first film, the projection being formed by a step between an upper face of the electrode and an upper face of the structure out of the first film, such that a first portion which is a part of the upper face of the electrode is exposed; a fourth step of forming a second film covering the first film and the first portion; a fifth step of forming a protective film in the opening by processing the second film, the protective film covering the first portion and a side face defining the opening, and being not formed on an upper face of the projection of the first film; and a sixth step of forming a third film on the first film and the protective film by spin coating.