Cu-Ga Alloy Sputtering Target, and Method for Producing Same

摘要

A melted and cast Cu—Ga alloy sputtering target containing 22 at % or more and 29 at % or less of Ga, and remainder being Cu and unavoidable impurities, wherein the Cu—Ga alloy sputtering target has an eutectoid structure configured from a mixed phase of a ζ phase, which is an intermetallic compound layer of Cu and Ga, and a γ phase, and satisfies a relational expression of D≦7×C−150 when a diameter of the γ phase is D μm and a Ga concentration is C at %. A sputtering target having a cast structure is advantageous in that gas components such as oxygen can be reduced in comparison to a sintered compact target. Thus, it is possible to reduce oxygen and obtain a target with a favorable cast structure, in which the segregated phase is dispersed, by continuously solidifying the sputtering target having the foregoing cast structure under a solidifying condition of a constant cooling rate.

主权项

1. A melted and cast Cu—Ga alloy sputtering target containing 22 at % or more and 29 at % or less of Ga, and remainder being Cu and unavoidable impurities, wherein the Cu—Ga alloy sputtering target has an eutectoid structure,. excluding a structure containing a lamellar structure, configured from a mixed phase of a ζ phase, which is an intermetallic compound layer of Cu and Ga, and a γ phase, and satisfies a relational expression of D≦7×C−150 when a diameter of the γ phase is D μm and a Ga concentration is C at %.