| 摘要 |
Provided is a photoelectric conversion apparatus having improved productivity. This photoelectric conversion apparatus is provided with: an i-type semiconductor layer (3) and a first conductivity-type semiconductor layer (4), which are above a first surface (1a) of a semiconductor substrate (1); and a first electrode (6) and a second electrode (5), which are on the first conductivity-type semiconductor layer (4). The first surface (1a) has a first region (12), and a second region (11) that is the first surface region other than the first region (12). A semiconductor substrate (1) portion below the second region (11) is provided with a second conductivity-type region (2) having a higher second conductivity-type impurity concentration than the semiconductor substrate (1). The second electrode (5) is provided above the second region (11), and the first electrode (6) is provided above the first region (12). The photoelectric conversion apparatus has a portion having the i-type semiconductor layer (3) and the first conductivity-type semiconductor layer (4) between the second region (11) and the second electrode (5), and the second electrode (5) and the second region (11) are electrically connected to each other. |
