LOW-K DIELECTRIC LAYER WITH REDUCED DIELECTRIC CONSTANT AND STRENGTHENED MECHANICAL PROPERTIES

摘要

Embodiments of the present invention generally provide a method and apparatus for forming a low-k dielectric porous silicon oxycarbon layer within an integrated circuit. In one embodiment, a method is provided for depositing a porogen and bulk layer containing silicon oxycarbon layer, selectively removing the porogens from the formed layer without simultaneously cross-linking the bulk layer, and then cross-linking the bulk layer material. In other embodiments, methods are provided for depositing multiple silicon oxycarbon sublayers, selectively removing porogens from each sub-layer without simultaneously cross-linking the bulk material of the sub-layer, and separately cross-linking the sub-layers.

主权项

1. A method for forming a low-k layer, comprising:
forming a silicon oxycarbon layer that includes a bulk material and a porogen material; exposing the formed silicon oxycarbon layer to a gas that comprises radicals; and exposing the formed silicon oxycarbon layer to an amount of energy after exposing the formed silicon oxycarbon layer to the radicals, wherein the amount of energy cures the formed silicon oxycarbon layer.