| 摘要 |
PROBLEM TO BE SOLVED: To enable high-speed switching of a new type and low resistance MOSFET switch having large gate capacity.SOLUTION: A switch drive circuit includes: a first and a second MOSFETs 202, 204 which work as MOSFET switches; a capacitor 220 which works as an energy store tank; a charging component 200 for charging the capacitor 220; a first switch 222 in series with the charging component 200; and a second switch 224 in parallel with the charging component 200 and the capacitor 220. A charge stored in the capacitor 220 is supplied to gates of the first and second MOSFETs 202, 204, so that gate capacitances 206, 208 are rapidly charged, and thus, high-speed switching can be achieved. |
