PRODUCTION METHOD FOR SiC SINGLE CRYSTALS

摘要

Provided is a production method for SiC single crystals whereby air is unlikely to enter between seed crystals and a Si-C solution. The production method for SiC single crystals produces SiC single crystals by using a solution growth method whereby main surfaces (10a) of the seed crystals (10) face downwards and are caused to come in contact with the Si-C solution (11) and SiC single crystals are caused to grow on the main surfaces (10a). The main surfaces (10a) are flat. This production method includes a contact step (A), a contact step (B), and a growth step. In contact step (A), part of an area of the main surfaces (10a) is caused to come in contact with stored Si-C solution (11). In contact step (B), the area of contact between the main surfaces (10a) and the stored Si-C solution (11) is expanded by the wetting phenomenon, using an initial contact area being the partial area caused to come in contact in contact step (A) as the starting point therefor. In the growth step, SiC single crystals are grown upon the main surfaces (10a) that have come in contact with the stored Si-C solution (11).