| 摘要 |
The present invention relates to a light-emitting diode production method and to a light-emitting diode obtained thereby, and more specifically relates to a method wherein a nanostructure is coated uniformly over a wide surface area by means of spherical nanostructure transfer and wherein a light-emitting diode is produced in which the light-extraction efficiency is maximised by means of the coating, and relates to a light-emitting diode having outstanding light-extraction efficiency produced by the method. The present invention concerns a production method for a light-emitting diode in which a first semiconductor layer, an active layer and a second semiconductor layer are formed, wherein the method comprises: a step of coating a spherical nanostructure onto a first substrate; a step of transferring the nanostructure from the first substrate, which has been coated with the nanostructure, onto a second substrate; a step of transferring the nanostructure, which has been transferred onto the second substrate, onto the second semiconductor layer; and a step of forming an uneven portion by dry etching the second semiconductor layer by using a mask constituted by the nanostructure which has been transferred onto the second semiconductor layer. |
