TOP ELECTRODE ETCH IN A MAGNETORESISTIVE DEVICE AND DEVICES MANUFACTURED USING SAME

摘要

A two-step etching process is used to form the top electrode for a magnetoresistive device. The level of isotropy is different for each of the two etching steps, thereby providing advantages associated with isotropic etching as well as more anisotropic etching. The level of isotropy is controlled by varying power and pressure during plasma etching operations.

主权项

1. A method of manufacturing a magnetoresistive-based device, comprising:
forming a patterned layer of photoresist over an electrically conductive layer; etching a first portion of the electrically conductive layer not covered by the patterned layer of photoresist, wherein etching the first portion of the electrically conductive layer has a first level of etching isotropy; and etching a second portion of the electrically conductive layer not covered by the patterned layer of photoresist, wherein etching the second portion of the electrically conductive layer has a second level of etching isotropy, wherein the first level of etching isotropy is more anisotropic than the second level of etching isotropy.