INTEGRATED CIRCUITS WITH IMPROVED CONTACT STRUCTURES

摘要

Integrated circuits with improved contact structures are provided. In an exemplary embodiment, an integrated circuit includes a semiconductor substrate disposed with a device therein and/or thereon. The integrated circuit includes a contact structure in electrical contact with the device. The contact structure includes a plug metal and a barrier layer, and the barrier layer is selected from fluorine-free tungsten (FFW), tungsten carbide, and tungsten nitride. The integrated circuit further includes a dielectric material overlying the semiconductor substrate. Also, the integrated circuit includes an interconnect formed within the dielectric material and in electrical contact with the contact structure.

主权项

1. An integrated circuit comprising:
a semiconductor substrate disposed with a device therein and/or thereon; a contact structure in electrical contact with the device, wherein the contact structure includes a plug metal and a barrier layer, wherein the barrier layer is selected from fluorine-free tungsten (FFW), tungsten carbide, and tungsten nitride; a dielectric material overlying the semiconductor substrate; and an interconnect formed within the dielectric material and in electrical contact with the contact structure.