| 发明名称 |
SEMICONDUCTOR DEVICE INCLUDING A DIELECTRIC MATERIAL |
| 摘要 |
A method for manufacturing a semiconductor device includes providing a carrier and a semiconductor wafer having a first side and a second side opposite to the first side. The method includes applying a dielectric material to the carrier or the semiconductor wafer and bonding the semiconductor wafer to the carrier via the dielectric material. The method includes processing the semiconductor wafer and removing the carrier from the semiconductor wafer such that the dielectric material remains on the semiconductor wafer to provide a semiconductor device comprising the dielectric material. |
| 申请公布号 |
US2015235890(A1) |
申请公布日期 |
2015.08.20 |
| 申请号 |
US201414182689 |
申请日期 |
2014.02.18 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Goller Bernhard;Hess Eva-Maria;Fuergut Edward;Schweiger Christian |
| 分类号 |
H01L21/683;H01L21/268;H01L21/762;H01L23/00;H01L21/78;H01L21/304 |
主分类号 |
H01L21/683 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a semiconductor device, the method comprising:
providing a carrier; providing a semiconductor wafer having a first side and a second side opposite to the first side; applying a dielectric material to the carrier or the semiconductor wafer; bonding the semiconductor wafer to the carrier via the dielectric material; processing the semiconductor wafer; and removing the carrier from the semiconductor wafer such that the dielectric material remains on the semiconductor wafer to provide a semiconductor device comprising the dielectric material. |
| 地址 |
Neubiberg DE |
