| 摘要 |
Provided is a power semiconductor module capable of suppressing breakage of a power semiconductor element due to a surge voltage by reducing inductance between wiring lines in the power semiconductor module. This power semiconductor module is characterized in being provided with: positive and negative arms, each of which is configured by connecting self-arc-extinguishing semiconductor elements (6) in series, and has connecting points among the self-arc-extinguishing semiconductor elements (6); and a substrate (2) having formed thereon positive electrode-side direct current electrodes (10), negative electrode-side direct current electrodes (11), and alternating current electrodes (12), said positive electrode-side direct current electrodes, negative electrode-side direct current electrodes, and alternating current electrodes being connected to the positive and negative arms, and wiring patterns (3, 4), which connect the self-arc-extinguishing semiconductor elements (6) of the positive and negative arms with the positive electrode-side direct current electrodes (10), the negative electrode-side direct current electrodes (11), and the alternating current electrodes (12). The power semiconductor module is also characterized in that the positive electrode-side direct current electrode (10), the negative electrode-side direct current electrode (11), and the alternating current electrode (12) are insulated, and two of the respective electrodes are disposed to face each other. |
