MRAM element having improved data retention and low writing temperature

摘要

The present disclosure concerns a MRAM element (1) comprising a magnetic tunnel junction (2) including a reference layer (21) having a reference magnetization (210); a storage layer (23) having a storage magnetization (230, 234, 235); a tunnel barrier layer (22) included between the storage layer (23) and the reference layer (21); and a storage antiferromagnetic layer (24) exchange-coupling the storage layer (23) such as to pin the storage magnetization (230, 234, 235) at a low temperature threshold and to free it at a high temperature threshold; the anti-ferromagnetic layer (24) comprising: at least one first layer (241) having a first storage blocking temperature (T bs1 ), and at least one second antiferromagnetic layer (242) having a second storage blocking temperature (T bs2 ); the first storage blocking temperature (T bs1 ) being lower than the second storage blocking temperature (T bs2 ). The MRAM element disclosed herein combines better data retention compared with known MRAM elements with low writing mode operating temperature.