发明名称 Electronic devices and methods of making the same using solution processing techniques
摘要 An electronic device comprising: an electronic substrate comprising circuit elements; a double bank well-defining structure disposed over the electronic substrate, the double bank well-defining structure comprising a first layer of insulating material and a second layer of insulating material thereover, the second layer of insulating material having a lower wettability than the first layer of insulating material; and organic semiconductive material disposed in wells defined by the double bank well-defining structure.
申请公布号 US9111885(B2) 申请公布日期 2015.08.18
申请号 US200812808630 申请日期 2008.12.17
申请人 CAMBRIDGE DISPLAY TECHNOLOGY LIMITED 发明人 Burroughes Jeremy;Dowling Mark
分类号 H01L27/12;H01L27/32;H05K3/12;H01L27/28;H01L51/00;H01L51/05;H01L51/56 主分类号 H01L27/12
代理机构 Marshall, Gerstein & Borun LLP 代理人 Marshall, Gerstein & Borun LLP
主权项 1. An organic thin film transistor comprising: an electronic substrate comprising circuit elements, the circuit elements of the electronic substrate comprising source and drain electrodes, a channel region being defined between the source and drain electrodes; a double bank well-defining structure disposed over the source and drain electrodes, the double bank well-defining structure comprising a first layer of insulating material and a second layer of insulating material thereover, the second layer of insulating material having a lower wettability than the first layer of insulating material, both the first layer of insulating material and the second layer of insulating material being exposed in wells defined by the double bank well-defining structure, the first layer of insulating material defining bottom portions of the wells and the second layer of insulating material defining top portions of the wells; and organic semiconductive material disposed in the wells defined by the double bank well-defining structure, wherein the first layer of insulating material comprises an organic polymer and the second layer of insulating material comprises a fluorinated organic polymer having inherently low wettability.
地址 Cambridgeshire GB