Sense amplifier structure for a semiconductor integrated circuit device

摘要

A semiconductor integrated circuit device includes a first signal line and a second signal line, and a sense amplifier that includes a plurality of PMOS transistors and a plurality of NMOS transistors. The sense amplifier is configured to sense amplify a potential difference between the first signal line and the second signal line. The junction regions of the NMOS and PMOS transistors having the same conductivity type, and to which the same signal is applied, are formed in one integrated active region.

主权项

1. A semiconductor integrated circuit device, comprising:
a first signal line and a second signal line; and a sense amplifier that includes a plurality of NMOS transistors and a plurality of PMOS transistors, and is configured to sense-amplify a potential difference between the first signal line and the second signal line, wherein junction regions of the PMOS and NMOS transistors having the same conductivity type to which a same signal is applied are integrated to share a portion of one active region, and the sense amplifier includes a latch block, wherein the latch block includes: a first gate line arranged to partition one portion of the integrated active region; a second gate line arranged to partition another portion of the integrated active region; and an equalization block arranged between the first gate line and the second gate line.