Nitride semiconductor ultraviolet light-emitting element

摘要

An active layer including an AlGaN semiconductor layer having a band gap energy of 3.4 eV or higher and a p-type cladding layer configured of a p-type AlGaN semiconductor layer and located above the active layer are formed in a first region on the n-type cladding layer, the first region being in a plane parallel to a surface of the n-cladding layer configured of an n-type AlGaN semiconductor layer. An n-electrode metal layer making Ohmic contact with the n-type cladding layer is formed on an adjacent region to the first region in a second region which is a region other than the first region on the n-type cladding layer. A first reflective metal layer reflecting ultraviolet light emitted from the active layer is formed on a surface of the n-type cladding layer in the second region other than the adjacent region. The n-electrode metal layer is arranged between the first region and a region in which the first reflective metal layer contacts the surface of the n-type cladding layer.

主权项

1. A nitride semiconductor ultraviolet light-emitting element comprising:
an n-type cladding layer configured of an n-type AlGaN semiconductor layer; the n-type cladding layer formed on a template allowing the ultraviolet light to pass therethrough and configured of an insulator layer, a semiconductor layer, or a laminated body configured of the insulator layer and the semiconductor layer, the template including an AlN layer; an active layer including an AlGaN semiconductor layer having a band gap energy of 3.4 eV or higher; a p-type cladding layer configured of a p-type AlGaN semiconductor layer and located above the active layer; an n-electrode metal layer making Ohmic contact with the n-type cladding layer; and a first reflective metal layer reflecting ultraviolet light emitted from the active layer,wherein
the active layer and the p-type cladding layer are formed in a first region on the n-type cladding layer, the first region being in a plane parallel to a surface of the n-type cladding layer, the n-electrode metal layer is formed on an adjacent region to the first region, the adjacent region being in a second region which is a region other than the first region on the n-type cladding layer, the first reflective metal layer is formed on a surface of the n-type cladding layer in the second region other than the adjacent region, and the n-electrode metal layer is arranged between the first region and a region in which the first reflective metal layer contacts the surface of the n-type cladding layer.