Semiconductor memory device having sub word line driver and driving method thereof

摘要

A semiconductor memory device may include a memory cell array, a plurality of first sub word line drivers, and a plurality of second sub word line drivers. The memory cell array may comprise a plurality of sub cell arrays, a plurality of first word lines and a plurality of second word lines, wherein a loading of each of the first word lines is greater than a loading of each of the second word lines. Each of the plurality of first sub word line drivers may be connected to drive a corresponding one of the plurality of first word lines, wherein each of the first sub word line drivers has a first driving capability. Each of the plurality of second sub word line drivers may be connected to drive a corresponding one of the plurality of second word lines, wherein each of the second sub word line drivers has a second driving capability different from the first driving capability.

主权项

1. A semiconductor memory device comprising:
a memory cell array comprising a plurality of sub cell arrays, a plurality of first word lines and a plurality of second word lines, wherein a loading of each of the first word lines is greater than a loading of each of the second word lines; a plurality of first sub word line drivers each connected to drive a corresponding one of the plurality of first word lines, wherein each of the first sub word line drivers has a first driving capability; and a plurality of second sub word line drivers each connected to drive a corresponding one of the plurality of second word lines, wherein each of the second sub word line drivers has a second driving capability different from the first driving capability.