Epitaxial structure and process thereof for non-planar transistor

摘要

An epitaxial structure for a non-planar transistor is provided. A substrate has a fin-shaped structure. A gate is disposed across the fin-shaped structure. A silicon germanium epitaxial structure is disposed on the fin-shaped structure beside the gate, wherein the silicon germanium epitaxial structure has 4 <1,1,1> surfaces and its aspect ratio of width and thickness is at a range of 1:1˜1.3. A method for forming said epitaxial structure is also provided.

主权项

1. An epitaxial structure for a non-planar transistor, comprising:
a substrate having a fin-shaped structure; a gate disposed across the fin-shaped structure; and a silicon germanium epitaxial structure disposed on the fin-shaped structure beside the gate, wherein the silicon germanium epitaxial structure has 4 <1,1,1> surfaces and its aspect ratio of width and thickness is in a range of 1:1˜1.3, wherein the silicon germanium epitaxial structure sequentially comprises an undoped silicon germanium layer, a bulk silicon germanium layer, a linear silicon germanium layer and a silicon cap layer from an inner layer to an outer layer.