| 摘要 |
A vertically structured GaN LED and a method for manufacturing the same are provided to maximize the area of a reflector by implementing the reflector having the same area as an upper surface of an illumination structure. A vertically structured GaN LED(Light Emitting Diode) includes a supporting layer(190), a P-type electrode(170), an illumination structure(P), a reflector(120), an N-type bonding pad(110), and a protection layer(200). The P-type electrode is formed on the supporting layer. The illumination structure is formed by sequentially stacking a P-type GaN layer(160), an active layer(150), and an N-type GaN layer(140) on the P-type electrode. The reflector is formed on the illumination structure. The N-type bonding pad is partially formed on the reflector. The protection layer is formed at sides of the reflector, an illumination structure, a P-type electrode, and a supporting layer.
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