Readout circuit and semiconductor device

摘要

Provided is a readout circuit capable of detecting inversion of retained data caused by a noise, such as static electricity. The readout circuit is configured to retain opposing data in a first latch circuit and a second latch circuit in a readout period so as to be capable of detecting an anomaly of the retained data by making use of the fact that the data in the first latch circuit and the second latch circuit are inverted in the same direction due to a noise, such as static electricity.

主权项

1. A readout circuit comprising:
a first switch that reads data at an input terminal; a first latch circuit that retains the data read by the first switch; a second switch that initializes data in the first latch circuit; and an output terminal connected to the first latch circuit that outputs the data in the first latch circuit, wherein the readout circuit further comprises: a second latch circuit that retains data obtained by inverting the data in the first latch circuit; and a detection circuit having a first input connected to the first latch circuit and a second input connected to the second latch circuit, that detects a data anomaly, in which either the data in the first latch circuit or the data in the second latch circuit is inverted, and the detection circuit having an output connected to a detection terminal and outputs a detection signal from the detection terminal upon detection of a data anomaly.