发明名称 |
SEMICONDUCTOR MEMORY APPARATUS, AND REFERENCE VOLTAGE CONTROL CIRCUIT AND INTERNAL VOLTAGE GENERATION CIRCUIT THEREFOR |
摘要 |
An internal voltage control circuit according to an embodiment may include a source power supply selection unit configured to receive a first internal power supply voltage and a second internal power supply voltage and selecting the first internal power supply voltage and the second internal power supply voltage as a source voltage in response to a test mode enable signal, a first reference voltage generation unit configured to receive the source voltage from the source power supply selection unit, and configured to generate a to first low reference voltage and a first high reference voltage. The reference voltage control circuit may also include a second reference voltage generation unit configured to receive the first internal power supply voltage and configured to generate a second low reference voltage and a second high reference voltage. |
申请公布号 |
US2015228311(A1) |
申请公布日期 |
2015.08.13 |
申请号 |
US201414252087 |
申请日期 |
2014.04.14 |
申请人 |
SK hynix Inc. |
发明人 |
KIM Cheol Hoe;PARK Jae Boum;CHO Na Yeon |
分类号 |
G11C5/14;G11C7/12;G05F3/16 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
|
主权项 |
1. A reference voltage control circuit comprising:
a source power supply selection unit configured to receive a first internal power supply voltage and a second internal power supply voltage, and select the first internal power supply voltage or the second internal power supply voltage as a source voltage in response to a test mode enable signal; a first reference voltage generation unit configured to receive the source voltage from the source power supply selection unit, and configured to generate a first low reference voltage and a first high reference voltage; and a second reference voltage generation unit configured to receive the first internal power supply voltage, and configured to generate a second low reference voltage and a second high reference voltage. |
地址 |
Icheon-si Gyeonggi-do KR |