发明名称 SEMICONDUCTOR MEMORY APPARATUS, AND REFERENCE VOLTAGE CONTROL CIRCUIT AND INTERNAL VOLTAGE GENERATION CIRCUIT THEREFOR
摘要 An internal voltage control circuit according to an embodiment may include a source power supply selection unit configured to receive a first internal power supply voltage and a second internal power supply voltage and selecting the first internal power supply voltage and the second internal power supply voltage as a source voltage in response to a test mode enable signal, a first reference voltage generation unit configured to receive the source voltage from the source power supply selection unit, and configured to generate a to first low reference voltage and a first high reference voltage. The reference voltage control circuit may also include a second reference voltage generation unit configured to receive the first internal power supply voltage and configured to generate a second low reference voltage and a second high reference voltage.
申请公布号 US2015228311(A1) 申请公布日期 2015.08.13
申请号 US201414252087 申请日期 2014.04.14
申请人 SK hynix Inc. 发明人 KIM Cheol Hoe;PARK Jae Boum;CHO Na Yeon
分类号 G11C5/14;G11C7/12;G05F3/16 主分类号 G11C5/14
代理机构 代理人
主权项 1. A reference voltage control circuit comprising: a source power supply selection unit configured to receive a first internal power supply voltage and a second internal power supply voltage, and select the first internal power supply voltage or the second internal power supply voltage as a source voltage in response to a test mode enable signal; a first reference voltage generation unit configured to receive the source voltage from the source power supply selection unit, and configured to generate a first low reference voltage and a first high reference voltage; and a second reference voltage generation unit configured to receive the first internal power supply voltage, and configured to generate a second low reference voltage and a second high reference voltage.
地址 Icheon-si Gyeonggi-do KR