SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

摘要

A semiconductor device comprises: a substrate; a first and a second gate structure; a first and a second spacer; and a first and a second source and drain layer. The substrate comprises a field region having an element separation membrane and a first and a second active region protruding upward from the element separation membrane. The first and the second gate structure are respectively formed on the first and the second active region. The first and the second spacer are respectively formed on side walls of the first and the second active region to have a higher upper surface than the upper surface of the first and the second active region and have the upper surfaces having different heights. The first and the second source and drain layer are adjacent to the first and the second gate structure and are formed on the first and the second active region to come in contact with the first and the second spacer.