发明名称 |
Light-emitting device and manufacturing method thereof |
摘要 |
A light-emitting device which is thin and lightweight and has high flexibility, impact resistance, and reliability is provided. Further, a light-emitting device which is thin and lightweight and has high flexibility, impact resistance, and hermeticity is provided. In the light-emitting device in which a light-emitting region including a transistor and a light-emitting element is sealed between a first flexible substrate and a second flexible substrate, an opening is provided in the second flexible substrate around a region overlapping with the light-emitting region, the opening is filled with frit glass containing low-melting glass and bonding the first flexible substrate and the second flexible substrate, and the fit glass is provided so as to be in contact with an insulating layer provided over the first flexible substrate. The second flexible substrate may include an opening in a region overlapping with the light-emitting region. |
申请公布号 |
US9105869(B2) |
申请公布日期 |
2015.08.11 |
申请号 |
US201414546157 |
申请日期 |
2014.11.18 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Nishido Yusuke |
分类号 |
H01L51/50;H01L51/52;H05B33/04;H01L51/00;H01L27/32 |
主分类号 |
H01L51/50 |
代理机构 |
Nixon Peabody LLP |
代理人 |
Nixon Peabody LLP ;Costellia Jeffrey L. |
主权项 |
1. A light-emitting device comprising:
a first flexible substrate comprising a light-emitting region; a second flexible substrate facing the first flexible substrate, the second flexible substrate comprising an opening around the light-emitting region; and frit glass sealing the first flexible substrate and the second flexible substrate, wherein the opening is filled with the frit glass. |
地址 |
Kanagawa-ken JP |