Transistor and method of fabricating the same

摘要

Provided is a transistor. The transistor includes: a substrate; a semiconductor layer provided on the substrate and having one side vertical to the substrate and the other side facing the one side; a first electrode extending along the substrate and contacting the one side of the semiconductor layer; a second electrode extending along the substrate and contacting the other side of the semiconductor layer; a conductive wire disposed on the first electrode and spaced from the second electrode; a gate electrode provided on the semiconductor layer; and a gate insulating layer disposed between the semiconductor layer and the gate electrode, wherein the semiconductor layer, the first electrode, and the second electrode have a coplanar.

主权项

1. A transistor comprising:
a substrate; a semiconductor layer provided on the substrate and having one side vertical to the substrate and the other side facing the one side; a first electrode extending along the substrate and contacting the one side of the semiconductor layer; a second electrode extending along the substrate and contacting the other side of the semiconductor layer; a conductive wire disposed on the first electrode and spaced from the second electrode; a gate electrode provided on the semiconductor layer; a gate insulating layer disposed between the semiconductor layer and the gate electrode, and an interlayer insulating layer provided directly on the semiconductor layer and covering the gate electrode, wherein the interlayer insulating layer is not vertically over the one side and the other side of the semiconductor layer, wherein the semiconductor layer, the first electrode, and the second electrode have a coplanar level surface.