发明名称 |
Techniques for enhancing efficiency of photovoltaic devices using high-aspect-ratio nanostructures |
摘要 |
Photovoltaic devices and techniques for enhancing efficiency thereof are provided. In one aspect, a photovoltaic device is provided. The photovoltaic device comprises a photocell having a photoactive layer and a non-photoactive layer adjacent to the photoactive layer so as to form a heterojunction between the photoactive layer and the non-photoactive layer; and a plurality of high-aspect-ratio nanostructures on one or more surfaces of the photoactive layer. The plurality of high-aspect-ratio nanostructures are configured to act as a scattering media for incident light. The plurality of high-aspect-ratio nanostructures can also be configured to create an optical resonance effect in the incident light. |
申请公布号 |
US9105787(B2) |
申请公布日期 |
2015.08.11 |
申请号 |
US201314020253 |
申请日期 |
2013.09.06 |
申请人 |
International Business Machines Corporation |
发明人 |
Guha Supratik;Gunawan Oki |
分类号 |
H01L31/0232;H01L31/07;H01L31/0224;H01L31/0352;H01L31/18;H01L31/0256 |
主分类号 |
H01L31/0232 |
代理机构 |
Michael J. Chang, LLC |
代理人 |
Alexanian Vazken;Michael J. Chang, LLC |
主权项 |
1. A photovoltaic device comprising:
a photocell having i) a photoactive layer, ii) a plurality of high-aspect-ratio nanostructures on one or more surfaces of the photoactive layer configured to act as a scattering media for incident light, wherein the plurality of high-aspect-ratio nanostructures includes a first group of high-aspect-ratio nanostructures and a second group of high-aspect-ratio nanostructures iii) a metal layer on, and in direct contact with, the photoactive layer, and iv) electrical leads to directly contacting the metal layer and the photoactive layer, wherein a Schottky junction is formed between the metal layer and the photoactive layer, and wherein the metal layer is formed directly on a portion of the photoactive layer with the metal layer completely covering the first group of high-aspect-ratio nanostructures and leaves the second group of high-aspect-ratio nanostructures completely uncovered the first group of high-aspect-ratio nanostructures and leaves the second group of high-aspect-ratio nanostructures by the metal layer and thus free to aid in capturing and absorbing incident light and to generate charge carrier electron-hole pairs that can be transported to the electrical leads. |
地址 |
Armonk NY US |