发明名称 Techniques for enhancing efficiency of photovoltaic devices using high-aspect-ratio nanostructures
摘要 Photovoltaic devices and techniques for enhancing efficiency thereof are provided. In one aspect, a photovoltaic device is provided. The photovoltaic device comprises a photocell having a photoactive layer and a non-photoactive layer adjacent to the photoactive layer so as to form a heterojunction between the photoactive layer and the non-photoactive layer; and a plurality of high-aspect-ratio nanostructures on one or more surfaces of the photoactive layer. The plurality of high-aspect-ratio nanostructures are configured to act as a scattering media for incident light. The plurality of high-aspect-ratio nanostructures can also be configured to create an optical resonance effect in the incident light.
申请公布号 US9105787(B2) 申请公布日期 2015.08.11
申请号 US201314020253 申请日期 2013.09.06
申请人 International Business Machines Corporation 发明人 Guha Supratik;Gunawan Oki
分类号 H01L31/0232;H01L31/07;H01L31/0224;H01L31/0352;H01L31/18;H01L31/0256 主分类号 H01L31/0232
代理机构 Michael J. Chang, LLC 代理人 Alexanian Vazken;Michael J. Chang, LLC
主权项 1. A photovoltaic device comprising: a photocell having i) a photoactive layer, ii) a plurality of high-aspect-ratio nanostructures on one or more surfaces of the photoactive layer configured to act as a scattering media for incident light, wherein the plurality of high-aspect-ratio nanostructures includes a first group of high-aspect-ratio nanostructures and a second group of high-aspect-ratio nanostructures iii) a metal layer on, and in direct contact with, the photoactive layer, and iv) electrical leads to directly contacting the metal layer and the photoactive layer, wherein a Schottky junction is formed between the metal layer and the photoactive layer, and wherein the metal layer is formed directly on a portion of the photoactive layer with the metal layer completely covering the first group of high-aspect-ratio nanostructures and leaves the second group of high-aspect-ratio nanostructures completely uncovered the first group of high-aspect-ratio nanostructures and leaves the second group of high-aspect-ratio nanostructures by the metal layer and thus free to aid in capturing and absorbing incident light and to generate charge carrier electron-hole pairs that can be transported to the electrical leads.
地址 Armonk NY US