发明名称 PHOTODETECTEUR SEMI-TRANSPARENT A JONCTION P-N STRUCTUREE
摘要 <p>The invention relates to a photo-detection device (200) for detecting a set of wavelengths, comprising a plurality of stacked photo-detectors (100), the first one of which is capable of absorbing a first portion of the set and the second one of which is capable of absorbing a second portion of the set which is at least partially different from the first portion, wherein each photo-detector comprises first and second layers (102, 104) of doped semiconductor defining together a p-n junction, a dielectric material (109) transparent to the wavelengths flowing through the photo-detector, and in which a plurality of semiconducting or dielectric disjointed portions are such that the mean distance d between the centers of two adjacent portions is such that d is shorter than the shortest wavelength of the set.</p>
申请公布号 FR3008546(B1) 申请公布日期 2015.08.07
申请号 FR20130056908 申请日期 2013.07.12
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES 发明人 GIDON PIERRE;BOUTAMI SALIM
分类号 H01L31/0352;H01L27/146;H01L31/042;H01L31/18 主分类号 H01L31/0352
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