| 发明名称 |
NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE |
| 摘要 |
The nitride semiconductor light emitting device includes a first conductivity-type nitride semiconductor layer, a first superlattice layer disposed on the first conductivity-type nitride semiconductor layer, a pit forming layer disposed on the first superlattice layer and having a plurality of V-shaped pits, a second superlattice layer, an active layer, and a second conductivity-type nitride semiconductor layer disposed on the active layer and filling the V-shaped pits. The second superlattice layer is disposed on the pit forming layer and has windings that have the same shape as a shape of windings generated by the V-shaped pits. The active layer is disposed on the second superlattice layer and has windings that have the same shape as the shape of the windings generated by the V-shaped pits. |
| 申请公布号 |
US2015221826(A1) |
申请公布日期 |
2015.08.06 |
| 申请号 |
US201414540969 |
申请日期 |
2014.11.13 |
| 申请人 |
YANG Jung Seung;CHO Seong Joon;KIM Bum Joon;SHIN Dong Gyu;SHIM Hyun Wook;YOON Suk Ho |
发明人 |
YANG Jung Seung;CHO Seong Joon;KIM Bum Joon;SHIN Dong Gyu;SHIM Hyun Wook;YOON Suk Ho |
| 分类号 |
H01L33/24;H01L33/12;H01L33/32;H01L33/00;H01L33/06 |
主分类号 |
H01L33/24 |
| 代理机构 |
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代理人 |
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| 主权项 |
1. A nitride semiconductor light emitting device, comprising:
a first conductivity-type nitride semiconductor layer; a first superlattice layer disposed on the first conductivity-type nitride semiconductor layer; a pit forming layer disposed on the first superlattice layer and having a plurality of V-shaped pits; a second superlattice layer disposed on the pit forming layer and having windings that have the same shape as a shape of windings generated by the V-shaped pits; an active layer disposed on the second superlattice layer and having windings that have the same shape as the shape of the windings generated by the V-shaped pits; and a second conductivity-type nitride semiconductor layer disposed on the active layer, and filling the V-shaped pits. |
| 地址 |
Seongnam-si KR |
