发明名称 MEMRISTOR MEMORY WITH VOLATILE AND NON-VOLATILE STATES
摘要 A memristor memory is disclosed. In an example, a method of controlling a memristor memory includes operating the memristor memory in a volatile mode, wherein switching a state of a memristor cell is with a low writing load. The method also includes operating the same memristor memory in a non-volatile mode, wherein switching a state of the memristor cell is with a high writing load.
申请公布号 WO2015116107(A1) 申请公布日期 2015.08.06
申请号 WO2014US13885 申请日期 2014.01.30
申请人 HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 发明人 JEON, YOOCHARN;FOLTIN, MARTIN
分类号 G11C11/407;G11C5/14 主分类号 G11C11/407
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