发明名称 |
MEMRISTOR MEMORY WITH VOLATILE AND NON-VOLATILE STATES |
摘要 |
A memristor memory is disclosed. In an example, a method of controlling a memristor memory includes operating the memristor memory in a volatile mode, wherein switching a state of a memristor cell is with a low writing load. The method also includes operating the same memristor memory in a non-volatile mode, wherein switching a state of the memristor cell is with a high writing load. |
申请公布号 |
WO2015116107(A1) |
申请公布日期 |
2015.08.06 |
申请号 |
WO2014US13885 |
申请日期 |
2014.01.30 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
JEON, YOOCHARN;FOLTIN, MARTIN |
分类号 |
G11C11/407;G11C5/14 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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