摘要 |
<p>The present invention relates to an apparatus to continuously perform a substrate pre-treatment and deposition processes and, more specifically, relates to an apparatus to continuously performing substrate pre-treatment and deposition processes wherein a substrate surface modification and dry etching process chamber using an end hole type ion beam source, and a physical vapor deposition process chamber using a cold-cathode type ion beam source are combined through a gate valve and a substrate transfer apparatus. According to an embodiment of the present invention, the apparatus to continuously perform the substrate pre-treatment and deposition processes comprises: a substrate pre-treatment chamber to perform a substrate pre-treatment process using an end hole ion beam source; a thin film deposition chamber equipped to be adjacent to the substrate pre-treatment chamber, and to perform a thin film deposition process using a cold-cathode ion beam source; a gate valve prepared in a structure to be opened and closed between the substrate pre-treatment chamber and the thin film deposition chamber, to provide an independent space of the substrate pre-treatment chamber by shielding an opening part in the substrate pre-treatment process, to transfer towards the thin film deposition chamber for the thin film deposition process by opening the opening part after the substrate pre-treatment process, and to provide an independent space of the thin film deposition chamber by shielding an opening part in the thin film deposition process; and a bar to transfer a substrate prepared in the form of a bar, and prepared to be moved by passing through the substrate pre-treatment chamber and the thin film deposition chamber.</p> |
申请人 |
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YEUNGNAM UNIVERSITY |
发明人 |
LEE, HUI YEONG;HWANG, SEONG OK;SON, NAM GI;KIM, GI HWAN;EOM, YU JEONG |