| 发明名称 | Sidewall image transfer with a spin-on hardmask | ||
| 摘要 | Semiconductor devices include a first and a second set of parallel fins, each set of fins having a same number of fins and a pitch between adjacent fins below a minimum pitch of an associated lithography process, where a spacing between the first and second set of fins is greater than the pitch between adjacent fins; a gate structure over the first and second sets of fins; a merged source region that connects the first and second sets of fins on a first side of the gate structure; and a merged drain region that connects the first and second sets of fins on a second side of the gate structure. | ||
| 申请公布号 | US9099401(B2) | 申请公布日期 | 2015.08.04 |
| 申请号 | US201314028827 | 申请日期 | 2013.09.17 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION | 发明人 | He Hong;Tseng Chiahsun;Yeh Chun-Chen;Yin Yunpeng |
| 分类号 | H01L29/66;H01L21/311;H01L29/78;H01L29/417;H01L29/08;H01L21/8234;H01L21/8238;H01L21/84;H01L27/092 | 主分类号 | H01L29/66 |
| 代理机构 | Tutunjian & Bitetto, P.C. | 代理人 | Tutunjian & Bitetto, P.C. ;Alexanian Vasken |
| 主权项 | 1. A semiconductor device, comprising: a first and a second set of parallel fins, each set of fins having a same number of fins and a pitch between adjacent fins below a minimum pitch of an associated lithography process, wherein a spacing between the first and second set of fins is greater than the pitch between adjacent fins; a gate structure over the first and second sets of fins; a merged source region that electrically connects the first and second sets of fins on a first side of the gate structure; and a merged drain region that electrically connects the first and second sets of fins on a second side of the gate structure. | ||
| 地址 | Armonk NY US | ||