Semiconductor device with raised source/drain and replacement metal gate

摘要

In a method of fabricating a semiconductor device, a silicon-on-insulator (SOI) substrate is provided. This SOI substrate comprises a buried oxide layer and an ETSOI layer between the buried oxide layer and a surface of the SOI substrate. A dummy gate is formed on the ETSOI. At least two raised source/drain regions are epitaxially formed adjacent to the dummy gate, and a protective cap is formed thereon. An etch process employing at least one acid is used to remove the dummy gate from the ETSOI. A gate dielectric layer is deposited on the protective cap and the ETSOI after removing the dummy gate. A replacement metal gate is then formed on the gate dielectric layer to replace the removed dummy gate, the gate dielectric layer is removed from the protective metal cap, and the protective cap is removed from the raised source/drain regions.

主权项

1. A method for fabricating a semiconductor device, comprising:
forming a dummy gate on an ETSOI layer of a substrate, the substrate having an SOI layer, a buried oxide layer on the SOI layer, and the ETSOI layer on the buried oxide layer; epitaxially forming at least two raised source/drain regions adjacent to the dummy gate; forming a protective cap on the at least two raised source/drain regions; applying at least one acid to remove the dummy gate from the ETSOI; depositing a gate dielectric layer on the protective cap and on the ETSOI after removing the dummy gate from the ETSOI layer; forming a replacement metal gate on the gate dielectric layer to replace the removed dummy gate; removing the gate dielectric layer from the protective metal cap and the protective cap from the at least two raised source/drain regions; forming a passivation layer on the replacement metal gate; forming a silicide contact on each of the at least two raised source/drain regions; depositing a dielectric layer on the passivation layer and on the silicide contacts; forming first vias through the dielectric layer to the silicide contacts; and forming a second via through the dielectric layer and the passivation layer to the replacement metal gate.