发明名称 Magnetic read sensor using spin hall effect
摘要 A magnetic sensor utilizing the spin Hall effect to polarize electrons for use in measuring a magnetic field. The sensor eliminates the need for a pinned layer structure or antiferromagnetic layer (AFM layer), thereby reducing gap thickness for increased data density. The sensor includes a non-magnetic, electrically conductive layer that is configured to accumulate electrons predominantly of one spin at a side thereof when a current flows there-through. A magnetic free layer is located adjacent to the side of the non-magnetic, electrically conductive layer. A change in the direction of magnetization in the free layer relative to the orientation of the spin polarized electrons causes a change in voltage output of the sensor.
申请公布号 US9099119(B2) 申请公布日期 2015.08.04
申请号 US201313764600 申请日期 2013.02.11
申请人 HGST Netherlands B.V. 发明人 Mihajlovic Goran;Van Der Heijden Petrus A.
分类号 G11B5/127;G11B5/37;H01L43/06;G01R33/07;G01R33/12 主分类号 G11B5/127
代理机构 Zilka-Kotab, PC 代理人 Zilka-Kotab, PC
主权项 1. A magnetic sensor, comprising: a magnetic free layer wherein the magnetic free layer has a magnetization that is biased in a direction a parallel with an air bearing surface, but that is free to move in response to a magnetic field; a non-magnetic, electrically conductive layer formed adjacent to the magnetic free layer, and configured to accumulate spin polarized electrons at a side thereof based on a spin Hall effect when an electrical current flows through the non-magnetic, electrically conductive layer; circuitry connected with the non-magnetic, electrically conductive layer for supplying a current through the non-magnetic, electrically conductive layer; and circuitry connected to measure a change in electrical resistance between the magnetic free layer and the non-magnetic, electrically conductive layer.
地址 Amsterdam NL