发明名称 Power transistor arrangement and method for manufacturing the same
摘要 Various embodiments provide a power transistor arrangement. The power transistor arrangement may include a carrier; a first power transistor having a control electrode and a first power electrode and a second power electrode; and a second power transistor having a control electrode and a first power electrode and a second power electrode. The first power transistor and the second power transistor may be arranged next to each other on the carrier such that the control electrode of the first power transistor and the control electrode of the second power transistor are facing the carrier.
申请公布号 US9099441(B2) 申请公布日期 2015.08.04
申请号 US201313759161 申请日期 2013.02.05
申请人 INFINEON TECHNOLOGIES AUSTRIA AG 发明人 Otremba Ralf;Hoeglauer Josef;Schredl Juergen;Schloegel Xaver;Schiess Klaus
分类号 H01L23/48;H01L21/50;H01L23/00;H01L23/495;H01L23/31 主分类号 H01L23/48
代理机构 代理人
主权项 1. A power transistor arrangement, comprising: a carrier; a first power transistor comprising a first chip having a control electrode and a first power electrode and a second power electrode, wherein the control electrode and the second electrode are at a first side of the first chip and the first electrode is at a second side of the first chip that is opposite to the first side; a second power transistor comprising a second chip having a control electrode and a first power electrode and a second power electrode, wherein the control electrode and the second electrode are at a first side of the second chip and the first electrode is at a second side of the second chip that is opposite to the first side; wherein the first power electrode of the first power transistor and the first power electrode of the second power transistor are facing away from the carrier and are electrically coupled with each other by means of an electrically conductive coupling structure arranged above the first and second power electrodes, wherein the first power transistor and the second power transistor are arranged next to each other on the carrier such that the control electrode of the first power transistor and the control electrode of the second power transistor are facing the carrier, and wherein the electrically conductive coupling structure is electrically isolated from any power transistor arrangement external terminals.
地址 Villach AT