Resistance random access memory device

摘要

A resistance random access memory device according an embodiment includes a first electrode, a second electrode and a resistance change layer. The first electrode includes a metal. The resistance change layer is provided between the first electrode and the second electrode. One of the metal is able to reversibly move within the resistance change layer. The second electrode is formed of a material ionizing less easily than the metal. The resistance change layer contains silicon, oxygen, and nitrogen, a nitrogen concentration of the resistance change layer is less than 46 atomic % and not less than 20 atomic %.

主权项

1. A resistance random access memory device comprising:
a first electrode comprising a metal; a second electrode comprising a material ionizing less easily than the metal; and a resistance change layer provided between the first electrode and the second electrode, the resistance change layer comprising silicon, oxygen, and nitrogen, a nitrogen concentration of the resistance change layer being less than 46 atomic % and not less than 20 atomic %, one of the metal being able to reversely move within the resistance change layer.