| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a protection circuit and a vertical semiconductor element are integrally (monolithically) formed and which is composed of a wide band gap semiconductor. ! SOLUTION: A vertical MOSFET (101) comprises: a semiconductor substrate (10) composed of silicon carbide; a drift layer (12); a first well region (14); a first source region (16); a first gate insulation film (22); a first gate electrode (24); a first drain electrode (33); and a first source electrode (28). A lateral MOSFET (103) comprises: a second well region (34); a second source region (36); a drain region (35); a second gate insulation film (22A); a second gate electrode (44); and a second drain electrode (42). ! COPYRIGHT: (C)2015,JPO&INPIT |
