| 摘要 |
<p>Provided is an e-fuse structure of a semiconductor device improving fusing performance to enable a program in a lower voltage. The e-fuse structure of the semiconductor device comprises a first metal pattern including a first part and a second part extended in the first direction, and being adjacent to each other, including a third part adjacent to the second part, and formed on first metal level, wherein the second part is located between the first part and the third part , the first part and the second part are connected, and the third part is electrically separated from the second part; and a second metal pattern electrically connected to the first metal pattern, and formed on a second metal level different from the first metal level.</p> |
