| 摘要 |
Method for the controlled production of graphene under very low pressure and device for carrying out said method. The invention relates to a method and a device for preparing a graphene structure of 1-5 layers, controlling the number of layers, by means of a chemical vapour deposition (CVD) method on a pre-determined substrate, at the vacuum pressure of 10-4 -10-5 Pa, the temperature being at between 500-1050ºC, based on using a precursor carbon gas with a synchronised sequence of pulses. Each pulse has a specific escape time for the precursor gas, as a result of the pumping, the pressure pulse consisting of an instantaneous pressure increase as a result of the instantaneous opening of a valve, followed by an exponential pressure decrease, the number of pulses depending on the quantity of layers, and the time between pulses depending on the specific escape time of the precursor carbon gas. |
