SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

Provided are a semiconductor device and a method for fabricating the same. The semiconductor device comprises a semiconductor substrate including III elements and V elements, and a gate structure formed on the semiconductor substrate, wherein the semiconductor substrate includes a first area contacting with the lower part of the gate structure, and a second area placed on the lower part of the first area. In the first area, concentration of the III elements is lower than concentration of the V elements. In the second area, concentration of the III elements is substantially same to concentration of the V elements.