SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can get a width of a part where an interval between trenches adjacent to each other is narrowest.SOLUTION: A semiconductor device manufacturing method comprises the steps of: forming a plurality of element trenches 4 in an element region of a semiconductor wafer 20 and forming a plurality of test trenches 31-35 in a test region 21b by a process the same with a process of forming the element trenches 4; and embedding electrodes 6 in the element trench 4 and the test trenches 31-35. In the process of forming the test trenches 31-35, intervals of the test trenches 31-35 adjacent to each other on an opening side are differentiated from each other and some of the intervals is made smaller than an interval between openings of the element trenches 4. The semiconductor device manufacturing method further comprises the step of inspecting whether the electrodes 6 embedded in the test trenches 31-35 adjacent to each other are electrically connected after the embedding process of the electrodes 6, thereby to presume a width of the narrowest part of the intervals between the element trenches 4 adjacent to each other.