发明名称 |
SUBSTRATE FOR NITRIDE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF, AND RED LIGHT EMITTING SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF |
摘要 |
A production method of a substrate for nitride semiconductor device comprising
a mask formation step of using a metal nitride as a base material and forming a mask having a prescribed shape on the above-described base material,a three-dimensional structure growth step of growing a three-dimensional structure made of the same material as the base material on the base material having the mask formed thereon using a selective growth technique so that a layer having a higher index plane is formed on the lateral face, andan active layer growth step of growing an active layer containing a rare earth element on the lateral face of the above-described three-dimensional structure using an organometallic vapor phase epitaxial method. |
申请公布号 |
US2015214434(A1) |
申请公布日期 |
2015.07.30 |
申请号 |
US201314422185 |
申请日期 |
2013.08.01 |
申请人 |
OSAKA UNIVERSITY |
发明人 |
Fujiwara Yasufumi;Koizumi Atsushi;Terai Yoshikazu |
分类号 |
H01L33/32;H01L33/24;H01L33/00 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Suita-shi, Osaka JP |