METHOD FOR MANUFACTURING OPTICAL DEVICE AND OPTICAL DEVICE

摘要

A method for manufacturing an optical device includes forming a mask on main surface of a first GaN layer such that the mask has one or more openings in first region on the main surface of the first layer, selectively growing first GaN in the opening such that core including the first GaN is formed on exposed portion of the first layer, forming an active layer on the core such that active region is formed, forming a second GaN layer on the active region, removing a portion of the mask covering second region, forming a first electrode in the second region on the first layer, forming a second electrode covering the second layer and extending onto the mask in third region on the first layer, forming a first pad on the first electrode, and forming a second pad in a pad-forming region of the second electrode in the third region.

主权项

1. A method for manufacturing an optical device, comprising:
forming a mask on a main surface of a first conductive GaN layer such that the mask has at least one opening portion formed in a first region on the main surface of the first conductive GaN layer; selectively growing a first conductive GaN in the opening portion of the mask in the first region such that a core structure comprising the first conductive GaN is formed on an exposed portion of the first conductive GaN layer; forming an active layer on the core structure such that an active region comprising the active layer is formed to cover the core structure; forming a second conductive GaN layer on the active region such that the second conductive GaN layer covers the active region comprising the active layer; removing a portion of the mask covering a second region on the main surface of the first conductive GaN layer; forming a first electrode in the second region on the main surface exposed by the removing of the portion of the mask; forming a second electrode having a pad-forming region such that the second electrode covers the second conductive GaN layer and extends onto the mask in a third region on the main surface of the first conductive GaN layer; forming a first electrode pad on the first electrode; and forming a second electrode pad in the pad-forming region of the second electrode formed in the third region of the main surface of the first conductive GaN layer.