Methods for forming semiconductor devices with stepped bond pads

摘要

A method for forming a semiconductor structure includes forming a bond pad (112) over a last metal layer (104, 106, 108) of the semiconductor structure. The bond pad is connected to a portion of the last metal layer, and the bond pad includes a wire bond region. The wire bond region (202, 504, 902, 1102) is recessed such that the wire bond region has a first thickness and a region of the bond pad outside the wire bond region has a second thickness that is greater than the first thickness.