| 发明名称 |
GERMAINIUM PIN PHOTODIODE FOR INTEGRATION INTO A CMOS OR BICMOS TECHNOLOGY |
| 摘要 |
A diode comprising a light-sensitive germanium region which is totally embedded in silicon and forms with the silicon a lower interface and lateral interfaces, wherein the lateral interfaces do not extend perpendicularly, but obliquely to the lower interface and therefore produce a faceted form. |
| 申请公布号 |
EP2898544(A2) |
申请公布日期 |
2015.07.29 |
| 申请号 |
EP20130765723 |
申请日期 |
2013.09.19 |
| 申请人 |
IHP GMBH-INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS / LEIBNIZ-INSTITUT FÜR INNOVATIVE MIKROELEKTRONIK |
发明人 |
KNOLL, DIETER;LISCHKE, STEFAN;ZIMMERMANN, LARS;YAMAMOTO, YUJI;TRUSCH, ANDREAS |
| 分类号 |
H01L31/105;H01L21/02;H01L27/144;H01L31/0232;H01L31/028 |
主分类号 |
H01L31/105 |
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